IS43R16160B

Manufacturer: ISSI (now Infineon)

IS43R16160B datasheet by ISSI (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS43R16160B Datasheet Details

IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM AUGUST 2010.

Vdd =Vddq = 2.5V+0.2V (-5, -6, -75)
Double data rate architecture; two data transfers per clock cycle
Bidirectional , data strobe (DQS) is transmitted/ received with data
Differential clock input (CLK and /CLK)
DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
mands entered on each positive CLK edge
Data and data mask referenced to both edges of DQS
4 bank operation controlled by BA0 , BA1 (Bank Address)
/CAS latency -2.0 / 2.5 / 3.0 (programmable) ; Burst length -2 / 4 / 8 (programmable) Burst type -Sequential / Interleav
Auto precharge/ All bank precharge controlled by A10

Part Number	Description	Other Manufacturers
IS43R16160	256Mb Synchronous DRAM	Integrated Silicon Solution
IS43R16160A	16Meg x 16 256-MBIT DDR SDRAM	Integrated Silicon Solution
IS43R16160F	256Mb DDR SDRAM	Integrated Silicon Solution

Part Number	Description
IS43R16160D	DDR SDRAM
IS43R16320F	512Mb DDR SDRAM
IS43R16400B	Four internal banks for concurrent operation
IS43R32800D	DDR SDRAM
IS43R32800D	DDR SDRAM
IS43R83200B	256Mb DDR Synchronous DRAM
IS43R83200D	DDR SDRAM
IS43R86400F	512Mb DDR SDRAM
IS43DR16128C	DDR2 DRAM
IS43DR16160B	DDR2 DRAM