IS49NLS18160 Description
1.1 288Mb (32Mx9) Separate I/O BGA Ball-out (Top View) 123 4 5678 9 10 11 12 A VREF B VDD VSS DNU3 VEXT DNU3 VSS VSSQ VSS VEXT TMS TCK VSSQ Q0 D0 VDD C VTT DNU3 DNU3 VDDQ VDDQ Q1 D1 VTT D A221 DNU3 DNU3 VSSQ VSSQ.
IS49NLS18160 Key Features
- 533MHz DDR operation (1.067 Gb/s/pin data rate)
- 38.4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency)
- Reduced cycle time (15ns at 533MHz)
- 32ms refresh (8K refresh for each bank; 64K
- 8 internal banks
- Non-multiplexed addresses (address multiplexing option available)
- SRAM-type interface
- Programmable READ latency (RL), row cycle time, and burst sequence length
- Balanced READ and WRITE latencies in order to optimize data bus utilization
- Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK