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IS49NLS18320A - Separate I/O RLDRAM 2 Memory

Download the IS49NLS18320A datasheet PDF. This datasheet also covers the IS49NLS96400A variant, as both devices belong to the same separate i/o rldram 2 memory family and are provided as variant models within a single manufacturer datasheet.

General Description

1.1 576Mb (64Mx9) Separate I/O BGA Ball-out (Top View) 1 2 3 4 5678 A VREF VSS VEXT VSS B VDD DNU3 DNU3 VSSQ C VTT DNU3 DNU3 VDDQ D A221 DNU3 DNU3 VSSQ E A21 DNU3 DNU3 VDDQ F A5 DNU3 DNU3 VSSQ G A8 A6 A7 VDD H BA2 A9 VSS VSS J NF2 NF2 VDD VDD K DK DK# VDD VD

Key Features

  • 533MHz DDR operation (1.067 Gb/s/pin data rate).
  • 38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency).
  • Reduced cycle time (15ns at 533MHz).
  • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms).
  • 8 internal banks.
  • Non-multiplexed addresses (address multiplexing option available).
  • SRAM-type interface.
  • Programmable READ latency (RL), row cycle time, and burst sequence length.
  • Balanced READ and WRITE latenci.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS49NLS96400A-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS49NLC18160A Common I/O RLDRAM 2 Memory ISSI
IS49NLC36800A Common I/O RLDRAM 2 Memory ISSI
IS49NLC93200A Common I/O RLDRAM 2 Memory ISSI
IS49RL18128 4 Meg x 18 x 16 Banks x 2 Ranks RLDRAM3 ISSI
IS49RL36640 2Meg x 36 x 16 Banks RLDRAM3 ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS49NLS18320 Separate I/O RLDRAM 2 Memory
IS49NLS18160 Separate I/O RLDRAM 2 Memory
IS49NLS93200 Separate I/O RLDRAM 2 Memory
IS49NLS96400 Separate I/O RLDRAM 2 Memory
IS49NLS96400A Separate I/O RLDRAM 2 Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS49NLS96400A, IS49NLS18320A 576Mb (64Mbx9, 32Mbx18) Seperate I/O RLDRAM 2 Memory ADVANCED INFORMATION SEPTEMBER 2014 FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms)  8 internal banks  Non-multiplexed addresses (address multiplexing option available)  SRAM-type interface  Programmable READ latency (RL), row cycle time, and burst sequence length  Balanced READ and WRITE latencies in order to optimize data bus utilization  Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK.