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IS49NLS96400A Datasheet Separate I/o Rldram 2 Memory

Manufacturer: ISSI (now Infineon)

Overview: IS49NLS96400A, IS49NLS18320A 576Mb (64Mbx9, 32Mbx18) Seperate I/O RLDRAM 2 Memory ADVANCED INFORMATION SEPTEMBER.

Key Features

  • 533MHz DDR operation (1.067 Gb/s/pin data rate).
  • 38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency).
  • Reduced cycle time (15ns at 533MHz).
  • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms).
  • 8 internal banks.
  • Non-multiplexed addresses (address multiplexing option available).
  • SRAM-type interface.
  • Programmable READ latency (RL), row cycle time, and burst sequence length.
  • Balanced READ and WRITE latenci.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS49NLS96400 Separate I/O RLDRAM 2 Memory
IS49NLS93200 Separate I/O RLDRAM 2 Memory
IS49NLS18160 Separate I/O RLDRAM 2 Memory
IS49NLS18320 Separate I/O RLDRAM 2 Memory
IS49NLS18320A Separate I/O RLDRAM 2 Memory
IS49NLC18160 288Mb Common I/O RLDRAM 2 Memory
IS49NLC18320 Common I/O RLDRAM 2 Memory
IS49NLC18320A Common I/O RLDRAM 2 Memory
IS49NLC36160 Common I/O RLDRAM 2 Memory
IS49NLC36160A Common I/O RLDRAM 2 Memory

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