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IS61LV256AL - 32K x 8 LOW VOLTAGE CMOS STATIC RAM

General Description

high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum.

Key Features

  • High-speed access times:.
  • 10 ns.
  • Automatic power-down when chip is deselected.
  • CMOS low power operation.
  • 60 µW (typical) CMOS standby.
  • 65 mW (typical) operating.
  • TTL compatible interface levels.
  • Single 3.3V power supply.
  • Fully static operation: no clock or refresh required.
  • Three-state outputs.
  • Lead-free available.

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📁 Similar Datasheet

Part Number Description Manufacturer
IS61LV256 32K x 8 Low Voltage CMOS Static RAM Integrated Circuit Solution
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IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI
IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution Inc
IS61LV25616L 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV12816LL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM MARCH 2020 FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 µW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three-state outputs • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM.It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum.