IS62WV102416ALL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

Product Overview

Integrated Silicon Solution

Part number	IS62WV102416ALL
Manufacturer	Integrated Silicon Solution
File Size	375.47 KB
Description	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS62WV102416ALL Datasheet
Additional preview pages of the IS62WV102416ALL datasheet.

are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

High-speed access times: 25, 35 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CS1 and OE options.
CS1 power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) sp.

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Published: Mar 8, 2014 |