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IS62WV102416ALL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

General Description

are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access times: 25, 35 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CS1 and OE options.
  • CS1 power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) sp.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS62WV10248BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV20488ALL 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) speed = 25ns for VDD 2.4V to 3.