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IS65LV256AL - 32K x 8 LOW VOLTAGE CMOS STATIC RAM

Download the IS65LV256AL datasheet PDF. This datasheet also covers the IS62LV256AL variant, as both devices belong to the same 32k x 8 low voltage cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

power, 32,768-word by 8-bit static RAM.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum.

Key Features

  • High-speed access time: 20, 45 ns.
  • Automatic power-down when chip is deselected.
  • CMOS low power operation.
  • 17 µW (typical) CMOS standby.
  • 50 mW (typical) operating www. DataSheet4U. com.
  • TTL compatible interface levels.
  • Single 3.3V power supply.
  • Fully static operation: no clock or refresh required.
  • Three-state outputs.
  • Industrial and Automotive temperatures available.
  • Lead-free available ISSI MARCH.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62LV256AL_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS65LV256AL IS62LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 µW (typical) CMOS standby — 50 mW (typical) operating www.DataSheet4U.com • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three-state outputs • Industrial and Automotive temperatures available • Lead-free available ISSI MARCH 2006 ® DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum.