28F256L18 Datasheet | Intel Corporation

Features High performance Read-While-Write/Erase - 85 ns initial access - 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode - 25 ns asynchronous-page mode - 4-, 8-, 16-, and continuous-word burst mode - Burst suspend - Programmable WAIT configuration - Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ) - 1.8 V low-power buffered programming at 7 µs/byte (Typ) - Architecture - Asymmetrically-blocked architecture - Multiple 8-Mbit partitions: 64-Mbit and 128Mbit devices - Multiple 16-Mbit partitions: 256-Mbit devices - Four 16-Kword parameter blocks: top or bottom configurations - 64-Kword main blocks - Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE) - Status Register for partition and device status - Power - VCC (core) = 1.7 V - 2.0 V - VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V - Standby current: 30 µA (Typ) for 256-Mbit - 4-Word synchronous read current: 15 m A (Typ) at 54 MHz - Automatic Power Savings mode - Security - OTP space: - 64 unique factory device identifier bits - 64 user-programmable OTP bits - Additional 2048 user-programmable OTP bits - Absolute write protection: VPP = GND - Power-transition erase/program lockout - Individual zero-latency block locking - Individual block lock-down - Software - 20 µs (Typ) program suspend - 20 µs (Typ) erase suspend - Intel® Flash Data Integrator...