Datasheet4U Logo Datasheet4U.com

28F001BN-B - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

This page provides the datasheet information for the 28F001BN-B, a member of the 28F001BX-T 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY family.

Datasheet Summary

Features

  • that simplify write and allow block erase These devices aid the sy.

📥 Download Datasheet

Datasheet preview – 28F001BN-B

Datasheet Details

Part number 28F001BN-B
Manufacturer Intel
File Size 436.25 KB
Description 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
Datasheet download datasheet 28F001BN-B Datasheet
Additional preview pages of the 28F001BN-B datasheet.

📁 Similar Datasheet

  • 28F010 - 1 Megabit CMOS Flash Memory (Catalyst Semiconductor)
  • 28F1000 - MX28F1000 (Macronix International)
  • 28F102 - CAT28F102 (Catalyst Semiconductor)
  • 28F128J3A - (28FxxxJ3A) Intel StrataFlash Memory (Intel Corporation)
  • 28F128L18 - (28FxxxL18) StrataFlash Wireless Memory (Intel Corporation)
  • 28F128L30 - (28FxxxL30) Wireless Memory (Intel Corporation)
  • 28F128P30 - StrataFlash Embedded Memory (Intel Corporation)
  • 28F160C3 - 3 Volt Advanced+ Boot Block Flash Memory (Intel Corporation)
  • 28F2000PPC - MX28F2000P (MXIC)
  • 28F211 - M28F211 (ST Microelectronics)
Other Datasheets by Intel
  • 28F001BN-T - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
  • 28F001BX-B - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
  • 28F001BX-T - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
  • 28F002BC - 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY
  • 28F002BL-B - LOW-POWER BOOT BLOCK FLASH MEMORY
  • 28F002BL-T - LOW-POWER BOOT BLOCK FLASH MEMORY
  • 28F002BX-B - BOOT BLOCK FLASH MEMORY
  • 28F002BX-T - BOOT BLOCK FLASH MEMORY

Full PDF Text Transcription

Click to expand full text
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block Y 100 000 Erase Program Cycles Per Block Y Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM) Y SRAM-Compatible Write Interface Y Deep Power-Down Mode 0 05 mA ICC Typical 0 8 mA IPP Typical Y 12 0V g5% VPP Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns Maximum Access Time 5 0V g10% VCC Y Hardware Data Protection Feature Erase Write Lockout during Power Transitions Y Advanced Packaging JEDEC Pinouts 32-Pin PDIP 32-Lead PLCC TSOP Y ETOXTM II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y Extended
Published: |