Datasheet4U Logo Datasheet4U.com

28F001BX-B - 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

Download the 28F001BX-B datasheet PDF. This datasheet also covers the 28F001BX-T variant, as both devices belong to the same 1-mbit (128k x 8) boot block flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • that simplify write and allow block erase These devices aid the sy.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (28F001BX-T_IntelCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 28F001BX-B
Manufacturer Intel
File Size 436.25 KB
Description 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
Datasheet download datasheet 28F001BX-B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
28F010 1 Megabit CMOS Flash Memory Catalyst Semiconductor
28F1000 MX28F1000 Macronix International
28F102 CAT28F102 Catalyst Semiconductor
28F128J3A (28FxxxJ3A) Intel StrataFlash Memory Intel Corporation
28F128L18 (28FxxxL18) StrataFlash Wireless Memory Intel Corporation

Other Datasheets by Intel

Part Number Description
28F001BX-T 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BN-B 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BN-T 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F002BC 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY
28F002BL-B LOW-POWER BOOT BLOCK FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block Y 100 000 Erase Program Cycles Per Block Y Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM) Y SRAM-Compatible Write Interface Y Deep Power-Down Mode 0 05 mA ICC Typical 0 8 mA IPP Typical Y 12 0V g5% VPP Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns Maximum Access Time 5 0V g10% VCC Y Hardware Data Protection Feature Erase Write Lockout during Power Transitions Y Advanced Packaging JEDEC Pinouts 32-Pin PDIP 32-Lead PLCC TSOP Y ETOXTM II Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Y Extended