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2N6451 - N-Channel JFET

General Description

The -25V InterFET 2N6451 and 2N6452 are targeted for sensitive amplifier stages for midfrequencies designs.

Gate leakages are typically less than 50pA at room temperatures.

The TO-72 package is hermetically sealed and suitable for military applications.

Key Features

  • InterFET N0132L Geometry.
  • Low Noise: 1.0 nV/√Hz Typical.
  • High Gain: 15mS Minimum.
  • RoHS Compliant.
  • SMT, TH, and Bare Die Package options.

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Datasheet Details

Part number 2N6451
Manufacturer InterFET Corporation
File Size 414.42 KB
Description N-Channel JFET
Datasheet download datasheet 2N6451 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now 2N6451-2 2N6451, 2N6452 N-Channel JFET Features • InterFET N0132L Geometry • Low Noise: 1.0 nV/√Hz Typical • High Gain: 15mS Minimum • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Audio Amplifiers • Low-Noise, High Gain Amplifiers • Low-Noise Preamplifiers Description The -25V InterFET 2N6451 and 2N6452 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 50pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications.