2N6451 Datasheet | InterFET Corporation

Features - Inter FET N0132L Geometry - Low Noise: 1.0 n V/√Hz Typical - High Gain: 15m S Minimum - Ro HS pliant - SMT, TH, and Bare Die Package options. Applications - Audio Amplifiers - Low-Noise, High Gain Amplifiers - Low-Noise Preamplifiers Description The -25V Inter FET 2N6451 and 2N6452 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 50p A at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Gate Drain 2 Source TO-72 Bottom View 3 4 Case Source 1 Drain 2 SOT23 Top View 3 Gate Gate 3 Drain 2 Source 1 TO-92 Bottom View Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage Forward Transconductance 2N6451 Min -20 5 -0.5 15 Ordering Information Custom Part and Binning Options Available Part Number Description 2N6451; 2N6452 Through-Hole PN6451; PN6452 Through-Hole SMP6451; SMP6452 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMP6451TR; SMP6452TR 13” Tape and Reel: Max 9,000...