2N6452 Description
The -25V InterFET 2N6451 and 2N6452 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 50pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications.
2N6452 Key Features
- InterFET N0132L Geometry
- Low Noise: 1.0 nV/√Hz Typical
- High Gain: 15mS Minimum
- RoHS pliant
- SMT, TH, and Bare Die Package options