2N6550 Datasheet | InterFET Corporation

Features - Inter FET N0450L Geometry - Low Noise: 0.9 n V/√Hz Typical - High Gain: 25m S Minimum - Ro HS pliant - SMT, TH, and Bare Die Package options. Applications - Low-Noise, High Gain Amplifiers Description The -20V Inter FET 2N6550 is targeted for sensitive amplifier stages for mid-frequencies designs. The 2N6550 has a cutoff voltage of less than 3.0V ideal for low-level power supplies. The TO-46 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source Source 1 Drain 2 TO-46 Bottom View 3 1 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS IDSS Gate to Source Breakdown Voltage Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage Forward Transconductance Ordering Information Custom Part and Binning Options Available Part Number Description Through-Hole PN6550 Through-Hole SMP6550 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMP6550TR 13” Tape and Reel: Max 9,000 Pieces 2N6550COT Chip Orientated Tray (COT Waffle Pack) 2N6550CFT Chip Face-up Tray (CFT Waffle...