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2N6453 - N-Channel JFET

Product Overview

InterFET

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2N6453 N-Channel JFET by InterFET - Datasheet Preview — Datasheet preview – 2N6453

Datasheet Details

Part number	2N6453
Manufacturer	InterFET
File Size	702.43 KB
Description	N-Channel JFET
Datasheet	2N6453 Datasheet
Additional preview pages of the 2N6453 datasheet.

Product details

Description

The -25V InterFET 2N6453 and 2N6454 are targeted for sensitive amplifier stages for mid-frequencies designs.

Gate leakages are typically 750fA at room temperatures.

The InterFET proprietary JFET materials and processes result in highest radiation tolerance and lowest leakage JFETs on the market.

Features

InterFET N0132L Geometry.
Low noise: 1.0 nV/√Hz typical.
High gain: 32mS typical.
Low gate leakage: 750fA typical @10V.
Typical IDSS: 25mA.
Typical BVGSS: -35V.
High radiation tolerance.
RoHS, REACH, CMR compliant.
Custom test and binning options available.
SMT, TH, and bare die package options.
Edge case SPICE modeling: InterFET SPICE Industry Standard Crosses.
2SK152, 2SK170, 2N3972, 2N.

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Published: Jun 13, 2020 |