Description
The -25V InterFET 2N6453 and 2N6454 are targeted for sensitive amplifier stages for mid-frequencies designs.
Gate leakages are typically 750fA at room temperatures.
The InterFET proprietary JFET materials and processes result in highest radiation tolerance and lowest leakage JFETs on the market.
Features
- InterFET N0132L Geometry.
- Low noise: 1.0 nV/√Hz typical.
- High gain: 32mS typical.
- Low gate leakage: 750fA typical @10V.
- Typical IDSS: 25mA.
- Typical BVGSS: -35V.
- High radiation tolerance.
- RoHS, REACH, CMR compliant.
- Custom test and binning options available.
- SMT, TH, and bare die package options.
- Edge case SPICE modeling: InterFET SPICE
Industry Standard Crosses.
- 2SK152, 2SK170, 2N3972, 2N.
2N6454 Datasheet
