2N6450
Features
- Inter FET N0042SY Geometry
- High Voltage
- Low Input Capacitance: 10p F Maximum
- Ro HS pliant
- SMT, TH, and Bare Die Package options.
Applications
- High Voltage
Description
The -300V Inter FET 2N6449 and 2N6450 are targeted for high voltage applications. The TO-39 package is hermetically sealed and suitable for military applications.
Gate/Case Drain 2 Source
TO-39 Bottom View
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
2N6449 Min -300 2 -2 0.5
Ordering Information Custom Part and Binning Options Available
Part Number
Description
2N6449; 2N6450
Through-Hole
2N6449COT; 2N6450COT Chip Orientated Tray (COT Waffle Pack)
2N6449CFT; 2N6450CFT
Chip Face-up Tray (CFT Waffle Pack)
Case TO-39 COT CFT
2N6450 Min
Unit
-200
2 m A
-2
0.5 m...
