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NJ26A - Silicon Junction Field-Effect Transistor

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Part number NJ26A
Manufacturer InterFET
File Size 148.92 KB
Description Silicon Junction Field-Effect Transistor
Datasheet download datasheet NJ26A Datasheet
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F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ26A Process. Datasheet 2N4416, 2N4416A www.DataSheet4U.
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