InterFET NJ26L
Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier
| Part No. | NJ26L |
|---|---|
| Datasheet | NJ26L Download |
| Manufacturer |  InterFET |
| Description | Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 8 5 1.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 – 0.5 Min – 25 Typ – 30 – 10 – 100 40 –6 Max Unit V pA mA V NJ26L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 15V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-13 NJ26L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.5 V Gfs as a Function of VGS(OFF) 10 Transconductance in mS 15 VGS = Ø V Drain Current in mA 12 VGS = – 0.5 V 9 VGS = –1.0 V 6 VGS = –1.5 V 3 VGS = –2.0 V 0 5 10 15 20...