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P0099F
P0099F Process Geometry
Features
• Low Noise: 2.0 nV/√Hz Typical • Typical Input Capacitance: 18pF • Typical Breakdown Voltage: 60V • High Input Impedance • Small Die: 492um X 492um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish
Applications
• General Purpose Amplifier • Switching • Matched Pair Applications • Custom Part Options
Description
The InterFET P0099F Geometry is ideal for switching and general purpose amplification applications.