2N6804 Description
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
| Part number | 2N6804 |
|---|---|
| Download | 2N6804 Datasheet (PDF) |
| File Size | 168.98 KB |
| Manufacturer | International Rectifier |
| Description | TRANSISTORS |
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| Manufacturer | Part Number | Description |
|---|---|---|
Microsemi |
2N6804 | P-CHANNEL MOSFET |
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance; superior reverse energy and diode recovery dv/dt capability.