Datasheet4U Logo Datasheet4U.com

AUIRF7675M2TR1 - Automotive Grade Single N-Channel HEXFET

This page provides the datasheet information for the AUIRF7675M2TR1, a member of the AUIRF7675M2TR Automotive Grade Single N-Channel HEXFET family.

Datasheet Summary

Description

The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.

Features

  • combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)e Continuous.

📥 Download Datasheet

Datasheet preview – AUIRF7675M2TR1

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
DataSheet.in PD -97552 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 250W per Channel into 4Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7675M2TR AUIRF7675M2TR1 DirectFET™ Power MOSFET ‚ V(BR)DSS 150V RDS(on) typ. 47m max. RG (typical) Qg (typical) : 56m: 1.
Published: |