AUIRF7737L2TR1 Datasheet | International Rectifier

- 96315C AUIRF7737L2TR AUTOMOTIVE GRADE AUIRF7737L2TR1 Automotive Direct FET® Power MOSFET ‚ - Advanced Process Technology - Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications - Exceptionally Small Footprint and Low Profile - High Power Density - Low Parasitic Parameters - Dual Sided Cooling - 175°C Operating Temperature - Repetitive Avalanche Capability for Robustness and Reliability - Lead Free, Ro HS pliant and Halogen Free - Automotive Qualified - V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg SS S G SS S 40V 1.5mΩ 1.9mΩ 156A 89n C Applicable Direct FET® Outline and Substrate Outline  SB SC M2 M4 L6 Direct FET® ISOMETRIC L4 L6 L8 Description The AUIRF7737L2 bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced Direct FET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The Direct FET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced Direct FET® packaging platform coupled with the latest silicon technology allows the AUIRF7737L2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional Features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These Features bine to...