AUIRF9Z34N Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

AUIRF9Z34N power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	AUIRF9Z34N
Manufacturer	International Rectifier (now Infineon)
File Size	282.33 KB
Description	Power MOSFET
Datasheet	AUIRF9Z34N Datasheet

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G D TO-220AB AUIRF9Z34N S G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Overview

AUTOMOTIVE GRADE PD - 97627A AUIRF9Z34N.

Key Features

l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
HEXFET® Power MOSFET D V(BR)DSS RDS(on) max. ID D -55V 0.10Ω -19A G S.

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