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AUIRF9Z34N - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D V(BR)DSS RDS(on) max. ID D -55V 0.10Ω -19A G S.

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AUTOMOTIVE GRADE PD - 97627A AUIRF9Z34N Features l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* HEXFET® Power MOSFET D V(BR)DSS RDS(on) max. ID D -55V 0.10Ω -19A G S Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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