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AUIRFP4110 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Enhanced dV/dT and dI/dT capability.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • HEXFET® Power MOSFET  D VDSS 100V RDS(on) typ. 3.7m max 4.5m G ID (Silicon Limited) 180A S ID (Package Limited) 120A.

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AUTOMOTIVE GRADE AUIRFP4110 Features Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET  D VDSS 100V RDS(on) typ. 3.7m max 4.5m G ID (Silicon Limited) 180A S ID (Package Limited) 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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