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AUIRFP4110 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Overview

AUTOMOTIVE GRADE AUIRFP4110.

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Enhanced dV/dT and dI/dT capability.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • HEXFET® Power MOSFET  D VDSS 100V RDS(on) typ. 3.7m max 4.5m G ID (Silicon Limited) 180A S ID (Package Limited) 120A.