AUIRFP2907 Datasheet | International Rectifier

Features l Advanced Planar Technology l Low On-Resistance l Dynamic d V/d T Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, Ro HS pliant l Automotive Qualified- Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max ID (Silicon Limited) S ID (Package Limited) 75V 3.6mΩ 4.5mΩ h209A 90A Gate TO-247AC AUIRFP2907 Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Max. 209h 148h Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) c IDM Pulsed Drain Current 90 840 PD @TC = 25°C Power Dissipation Linear Derating Factor 470 W 3.1 W/°C VGS EAS IAR EAR dv/dt Gate-to-Source Voltage d Single Pulse Avalanche Energy (Thermally Limited) c Avalanche Current c Repetitive Avalanche Energy e Peak Diode Recovery dv/dt ± 20 1970 See Fig....