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AUIRFP2907Z - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Overview

AUIRFP2907Z AUTOMOTIVE GRADE HEXFET® Power MOSFET.

Key Features

  • D PD - 97550 Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) max. ID 75V 4.5mΩ 170A G S.