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AUIRFR1018E - Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • G PD - 97685 AUIRFR1018E HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: max. ID (Silicon Limited) c8.4m: 79A S ID (Package Limited) 56A.

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AUTOMOTIVE GRADE Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * G PD - 97685 AUIRFR1018E HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: max. ID (Silicon Limited) c8.4m: 79A S ID (Package Limited) 56A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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