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AUIRFR2405 - Power MOSFET

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l.
  • HEXFET® Power MOSFET D l l l l l l l Advanced Planar Technology Dynamic dV/dT Rating Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 55V 11.8mΩ 16mΩ 56A 30A G S ID (Package Limited) D h.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE PD - 97688A AUIRFR2405 Features l ● HEXFET® Power MOSFET D l l l l l l l Advanced Planar Technology Dynamic dV/dT Rating Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 55V 11.8mΩ 16mΩ 56A 30A G S ID (Package Limited) D h Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.