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AUIRFR2407 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: AUTOMOTIVE GRADE PD - 97689A AUIRFR2407.

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G S D-Pak AUIRFR2407 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Key Features

  • l l.
  • HEXFET® Power MOSFET D l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 75V 21.8mΩ 26mΩ 42A G S D.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
AUIRFR2405 Power MOSFET
AUIRFR2307Z HEXFET Power MOSFET
AUIRFR2607Z Power MOSFET
AUIRFR2905Z HEXFET Power MOSFET
AUIRFR024N Power MOSFET
AUIRFR1010Z Power MOSFET
AUIRFR1018E Power MOSFET
AUIRFR120Z Power MOSFET
AUIRFR3504 HEXFET Power MOSFET
AUIRFR3504Z HEXFET Power MOSFET

AUIRFR2407 Distributor