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AUIRFR4105 - Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 45mΩ 27A 20A G S ID (Package Limited) g D S G.

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AUTOMOTIVE GRADE PD - 97597A AUIRFR4105 HEXFET® Power MOSFET Features ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 45mΩ 27A 20A G S ID (Package Limited) g D S G Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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