AUIRFR4105
Overview
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
- Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant Automotive Qualified *
- V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 45mΩ 27A 20A G S ID (Package Limited) g
