Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Key Features
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant Automotive Qualified.
D
V(BR)DSS RDS(on) max. ID (Silicon Limited)
55V 45mΩ 27A 20A
G S
ID (Package Limited)
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D S G.
Full PDF Text Transcription for AUIRFR4105 (Reference)
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nar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up toTjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) max. ID (Silicon Limited) 55V 45mΩ 27A 20A G S ID (Package Limited) g D S G Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.