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AUIRFR4105Z - HEXFET Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • AUIRFR4105Z AUIRFU4105Z 55V 24.5mΩ 30A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D V(BR)DSS RDS(on) max. ID G S.

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Full PDF Text Transcription for AUIRFR4105Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFR4105Z. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PD - 97544 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features ● ● ● ● ● ● ● AUIRFR4105Z AUIRFU4105Z 55V 24.5mΩ 30A Advanced Process Technology Ultra Low O...

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05Z AUIRFU4105Z 55V 24.5mΩ 30A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) max. ID G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Logo AUIRFR4105Z Power MOSFET Infineon

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