Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Advanced Process Technology.
- Ultra Low On-Resistance.
- Dynamic dv/dt Rating.
- 175°C Operating Temperature.
- Fast Switching.
- Repetitive Avalanche Allowed up to Tjmax.
- Lead-Free, RoHS Compliant.
- Automotive Qualified.
- D
G S
PD - 97713
AUIRFS3006
HEXFET® Power MOSFET
VDSS RDS(on)
typ. max. ID (Silicon Limited)
ID (Package Limited)
60V
2.0m: 2.5m:
c270A
195A.
AUIRFS3006 Datasheet
