Datasheet Summary
AUTOMOTIVE GRADE
Insulated Gate Bipolar Transistor
C
VCES = 600V IC (Nominal) = 75A tSC 5µs, TJ (max) = 175°C VCE(on) typ = 1.7V @ IC= 75A
Applications
- HEV Inverter
E n-channel
Features
Low VCE(on) Trench IGBT Technology
Low Switching losses
5 µs Short Circuit Capability Square RBSOA and 100% Clamp IL Tested Tight parameter distribution Lead-Free, RoHS pliant Automotive qualified
Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE(on) and Low switching losses Rugged motor drive operation
Rugged hard switching operation Simpler system level design
Environmentally friendlier Qualification...