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AUIRGR4045D - INSULATED GATE BIPOLAR TRANSISTOR

Download the AUIRGR4045D datasheet PDF. This datasheet also covers the AUIRGU4045D variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • Maximum Junction temperature 175 °C.
  • 5µs SCSOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM.
  • Positive VCE (on) Temperature Coefficient.
  • Ultra Fast Soft Recovery Co-pak Diode.
  • Tighter Distribution of Parameters.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • AUIRGU4045D C G E n-channel VCES = 600V IC = 6.0A, TC = 100°C VCE(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRGU4045D-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 97637 AUIRGR4045D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Automotive Qualified* AUIRGU4045D C G E n-channel VCES = 600V IC = 6.0A, TC = 100°C VCE(on) typ. = 1.