Datasheet Summary
AUTOMOTIVE GRADE
- 97637
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Low VCE (on) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction temperature 175 °C
- 5µs SCSOA
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (on) Temperature Coefficient.
- Ultra Fast Soft Recovery Co-pak Diode
- Tighter Distribution of Parameters
- Lead-Free, RoHS pliant
- Automotive Qualified-
AUIRGU4045D
G E n-channel
VCES = 600V IC = 6.0A, TC = 100°C
VCE(on) typ. = 1.7V
Benefits
- High Efficiency in a Wide Range of Applications
- Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching...