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AUIRLB3036 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l Logic Level Gate Drive l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 1.9mΩ cmax. 2.4mΩ G ID (Silicon Limited) 270A S ID (Package Limited) 195A D.

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AUTOMOTIVE GRADE AUIRLB3036 Features l Advanced Process Technology l Ultra Low On-Resistance l Logic Level Gate Drive l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 1.9mΩ cmax. 2.4mΩ G ID (Silicon Limited) 270A S ID (Package Limited) 195A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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