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AUIRLR3110Z - Power MOSFET

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Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 100V 11mΩ 14mΩ 63A 42A k.

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AUTOMOTIVE GRADE PD - 96369 AUIRLR3110Z AUIRLU3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 100V 11mΩ 14mΩ 63A 42A k Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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