AUIRLR3636 Datasheet | International Rectifier

AUTOMOTIVE GRADE Features l Advanced Process Technology l Ultra Low On-Resistance l Logic Level Gate Drive l Advanced Process Technology l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, Ro HS pliant l Automotive Qualified - G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 5.4m: c6.8m: 99A S ID (Package Limited) 50A G Gate D-Pak AUIRLR3636 D Drain S Source Base Part Number AUIRLR3636 Package Type D-pak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Quantity 75 2000 3000 3000 Orderable Part Number AUIRLR3636 AUIRLR3636TR AUIRLR3636TRL...