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CPV363M4FPbF - IGBT

Datasheet Summary

Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all "tail" losses.

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Bulletin I27313 02/07 CPV363M4FPbF IGBT SIP MODULE Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve • TOTALLY LEAD-FREE 3 Q1 6 Q2 Fast IGBT 1 D1 9 Q3 4 D2 12 Q4 D3 15 Q5 10 D4 18 Q6 D5 16 D6 Product Summary 7 13 Output Current in a Typical 5.0 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.
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