Datasheet4U Logo Datasheet4U.com

CPV363M4FPbF - IGBT

General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all "tail" losses.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CPV363M4KPbF IGBT Vishay
CPV363M4UPbF Fast IGBT Vishay
CPV362M4FPbF Fast IGBT Vishay
CPV362M4UPbF Fast IGBT Vishay
CPV364M4FPbF Fast IGBT Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
CPV363M4F IGBT SIP MODULE
CPV363M4K IGBT SIP MODULE
CPV363MF IGBT SIP MODULE Fast IGBT
CPV363MK IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
CPV363MM IGBT SIP MODULE Short Circuit Rated Fast IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Bulletin I27313 02/07 CPV363M4FPbF IGBT SIP MODULE Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve • TOTALLY LEAD-FREE 3 Q1 6 Q2 Fast IGBT 1 D1 9 Q3 4 D2 12 Q4 D3 15 Q5 10 D4 18 Q6 D5 16 D6 Product Summary 7 13 Output Current in a Typical 5.0 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.