Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve www.DataSheet4U.com extremely low on-resistance per silicon area.
Features
- 19 (.086)
1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)
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1.02 (.040) 1.64 (.025) 1 2 3
6.22 (.245) 5.97 (.235)
10.42 (.410) 9.40 (.370) 0.51 (.020) MIN. LEA D AS SIG NME NT S 1 - G AT E 2 - DRA IN 3 - S OUR CE 4 - DRA IN
-B 1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030)
0.89 (.035) 0.64 (.025) 0.25 ( .010) M A M B NOT ES:
0.58 (.023) 0.46 (.018)
2.28 (.090) 4.57 (.180)
1 DIME NSIO NING & T OLE.