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G4PC40K - IRG4PC40K

Key Features

  • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
  • Generation 4 IGBT design provides higher efficiency than Generation 3.
  • Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for specified.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
G4PC40FD IRG4PC40FD
G4PC40U IRG4PC40U
G4PC40UD IRG4PC40UD
G4PC30F INSULATED GATE BIPOLAR TRANSISTOR
G4PC30KD IRG4PC30KD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C www.DataSheet4U.