Datasheet Summary
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PD 91466E
IRG4PC40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-247AC package
UltraFast Speed IGBT
VCES = 600V
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A n-channel
Benefits
- Generation 4 IGBT's offer highest efficiency available
- IGBT's optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR...
