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G4PC40UD - IRG4PC40UD

Key Features

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • IGBT co-packaged with.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
G4PC40U IRG4PC40U
G4PC40FD IRG4PC40FD
G4PC40K IRG4PC40K
G4PC30F INSULATED GATE BIPOLAR TRANSISTOR
G4PC30KD IRG4PC30KD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94937 IRG4PC40UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free Benefits • Generation -4 IGBT’s offer highest efficiencies available • IGBT’s optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT’s.