Datasheet Summary
- 94937
IRG4PC40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-247AC package
- Lead-Free
Benefits
- Generation -4 IGBTs offer highest efficiencies available
- IGBTs optimized for specific application conditions
- HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics...
