GA200TD120U Description
PD - 5.061B PRELIMINARY GA200TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.3V @VGE = 15V, IC = 200A "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK.
GA200TD120U Key Features
- Generation 4 IGBT technology
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Very low conduction and switching losses
- HEXFRED™ antiparallel diodes with ultra- soft recovery
- Industry standard package
- UL approved
- Increased operating efficiency
- Direct mounting to heatsink
- Performance optimized for power conversion: UPS, SMPS, Welding
- Lower EMI, requires less snubbing