GA200TD120U - HALF-BRIDGE IGBT DOUBLE INT-A-PAK

International Rectifier (now Infineon)

Key Features

Generation 4 IGBT technology.
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Very low conduction and switching losses.

GA200TD120U half-bridge igbt double int-a-pak by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	GA200TD120U
Manufacturer	International Rectifier (now Infineon)
File Size	299.66 KB
Description	HALF-BRIDGE IGBT DOUBLE INT-A-PAK
Datasheet	GA200TD120U Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
GA200TS60U	HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
GA200TS60UX	Ultra-FastTM Speed IGBT
GA200HS60S	Standard Speed IGBT
GA200HS60S1	Standard Speed IGBT
GA200NS61U	Ultra-Fast Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PD - 5.061B PRELIMINARY GA200TD120U Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.