IR02H420 Datasheet | International Rectifier

Features n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels n Undervoltage lockout .. n 5V Schmitt-triggered input logic n Half-Bridge output out of phase with HIN Product Summary VIN (max) ton/off trr RDS(on) PD (TA = 25 ºC) 500V 130 ns 270 ns 3.0Ω 2.0W Description The IR02H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are patible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic patible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts. Package IR02H420 9506 Typical Connection U P V IN T O 5 0 0 V D C B U S IR 0 2 H 4 2 0 V C C V C C V B H IN H IN V IN L IN L IN Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to , all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VIN VB VO VIH/VIL .. VCC dv/dt PD RθJA TJ TS TL Parameter Definition High Voltage Supply High Side Floating Supply Absolute Voltage Half-Bridge Output Voltage Logic Input Voltage (HIN & LIN) Low Side and Logic Fixed Supply Voltage Peak Diode Recovery dv/dt Package Power Dissipation @ TA ≤ +25ºC Thermal Resistance, Junction to...