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IR062HD4C10U-P2 - HIGH VOLTAGE HALF BRIDGE

Description

The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges.

Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction.

Features

  • Output Power IGBT’s in half-bridge configuration.
  • 575V rated breakdown voltage.
  • High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V.
  • Matched propagation delay for both channels.
  • Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2).
  • Undervoltage lockout.
  • 3.3V, 5V and 15V input logic compatible.

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Full PDF Text Transcription

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www.DataSheet4U.com Preliminary Data Sheet No. PD60171-D IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 575V rated breakdown voltage • High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V • Matched propagation delay for both channels • Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2) • Undervoltage lockout • 3.3V, 5V and 15V input logic compatible • Metal heatsink back for improved PD Package Description The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges.
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