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IR082HD4C10U-P2

Manufacturer: International Rectifier (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IR082HD4C10U-P2 datasheet preview

Datasheet Details

Part number IR082HD4C10U-P2
Datasheet IR082HD4C10U-P2 IR062HD4C10U-P2 Datasheet (PDF)
File Size 87.54 KB
Manufacturer International Rectifier (now Infineon)
Description HIGH VOLTAGE HALF BRIDGE
IR082HD4C10U-P2 page 2 IR082HD4C10U-P2 page 3

IR082HD4C10U-P2 Overview

The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges. Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction. The logic inputs are patible with standard CMOS or LSTTL outputs, down to 3.3V logic.

IR082HD4C10U-P2 Key Features

  • Output Power IGBT’s in half-bridge configuration
  • 575V rated breakdown voltage
  • High side gate drive designed for bootstrap
  • Matched propagation delay for both channels
  • Independent high and low side output channels
  • Undervoltage lockout
  • 3.3V, 5V and 15V input logic patible
  • Metal heatsink back for improved PD
International Rectifier (now Infineon) logo - Manufacturer

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