IR082HD4C10U-P2 Datasheet | International Rectifier

Features - Output Power IGBT’s in half-bridge configuration - 575V rated breakdown voltage - High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V - Matched propagation delay for both channels - Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2) - Undervoltage lockout - 3.3V, 5V and 15V input logic patible - Metal heatsink back for improved PD Package Description The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges. Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction. The logic inputs are patible with standard CMOS or LSTTL outputs, down to 3.3V logic. The frontend features an independent high and low side driver in phase with the logic patible input signals. The output features two IGBT’s in a halfbridge configuration. Propagation delays for the high and low side power IGBT’s are matched to simplify use. The device can operate up to 575 volts. 7 Pin .irf. .. IR062HD4C10U-P2 IR082HD4C10U-P2 Typical Connections HV DC Bus VIN IR062HD4C10U-P2 Vcc H IN L IN Vcc VB H IN VI N L IN TO LOAD Please note this info sheet contains advance information which may change before the product is released to production. HV DC Bus VIN IR082HD4C10U-P2 Vcc H IN L IN Vcc VB H...