IR2110SPBF Datasheet | International Rectifier

Features - Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage d V/dt immune - Gate drive supply range from 10 to 20V - Undervoltage lockout for both channels - 3.3V logic patible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset - CMOS Schmitt-triggered inputs with pull-down - Cycle by cycle edge-triggered shutdown logic - Matched propagation delay for both channels - Outputs in phase with inputs Product Summary VOFFSET (IR2110) 500V max. (IR2113) 600V max. IO+/- 2A / 2A VOUT - 20V ton/off (typ.) 120 & 94 ns Delay Matching (IR2110) 10 ns max. (IR2113) 20ns max. Packages Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are patible with standard CMOS or LSTTL output, down to 3.3V logic. The output 14-Lead PDIP IR2110/IR2113 16-Lead SOIC IR2110S/IR2113S drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts. Typical Connection up to 500V or 600V HIN HIN VS SD SD LIN LIN VCC VSS VSS VCC LO (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and Design Tips for proper circuit board layout. .infineon./gatedriver TO...