IRF1302 Datasheet | International Rectifier

- 94591 AUTOMOTIVE MOSFET HEXFET® Power MOSFET Benefits - - - - - - Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 20V RDS(on) = 4.0mΩ ID = 180A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely...