Datasheet4U Logo Datasheet4U.com

IRF1302 - Power MOSFET

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF130 N-Channel Power MOSFET Samsung semiconductor
IRF130 N-Channel Power MOSFET Seme LAB
IRF130 N-Channel Power MOSFET Intersil Corporation
IRF130 N-Channel Power MOSFET Fairchild Semiconductor
IRF130 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1302L Power MOSFET
IRF1302S Power MOSFET
IRF130 N-Channel Power MOSFET
IRF1310LPBF Power MOSFET
IRF1310N Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94591 AUTOMOTIVE MOSFET IRF1302 HEXFET® Power MOSFET D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 20V G S RDS(on) = 4.0mΩ ID = 180A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.