IRF1302L Overview
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating
- D2Pak IRF1302S TO-262 IRF1302L
