IRF3710PbF - HEXFET Power MOSFET

International Rectifier (now Infineon)

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRF3710PbF hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRF3710PbF
Manufacturer	International Rectifier (now Infineon)
File Size	218.87 KB
Description	HEXFET Power MOSFET
Datasheet	IRF3710PbF Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRF3710	Power MOSFET
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IRF3710LPBF	Power MOSFET
IRF3710S	Power MOSFET
IRF3710SPBF	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94954D l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free IRF3710PbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.